?2000 fairchild semiconductor international ffa20u120dn rev. f, september 2000 ultra fast recovery power rectifier absolute maximum ratings (per diode) t c =25 c unless otherwise noted thermal characteristics electrical characteristics (per diode) t c =25 c unless otherwise noted * pulse test: pulse width=300 s, duty cycle = 2% symbol parameter value units v rrm peak repetitive reverse voltage 1200 v i f(av) average rectified forward current @ t c = 100 c20 a i fsm non-repetitive peak surge current 60hz single half-sine wave 120 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter value units r jc maximum thermal resistance, junction to case 0.84 c/w symbol parameter min. typ. max. units v fm * maximum instantaneous forward voltage i f = 20a i f = 20a t c = 25 c t c = 100 c - - - - 3.5 3.2 v i rm * maximum instantaneous reverse current @ rated v r t c = 25 c t c = 100 c - - - - 20 1.2 a ma t rr i rr q rr maximum reverse recovery time maximum reverse recovery current maximum reverse recovery charge (i f =20a, di/dt = 200a/ s) - - - - - - 120 10 500 ns a nc w av l avalanche energy 1.0 - - mj ffa20u120dn features ? high voltage and high reliability high speed switching low forward voltage applications general purpose switching mode power supply free-wheeling diode for motor application power switching circuits to-3p 1 2 3 1. anode 2.cat hode 3. anode
?2000 fairchild semiconductor international rev. f, september 2000 ffa20u120dn typical characteristics figure 1. typical forward voltage drop vs. forward current figure 3. typical junction capacitance figure 5. typical reverse recovery current vs. di/dt figure 2. typical reverse current vs. reverse voltage figure 4. typical reverse recovery time vs. di/dt figure 6. forward current derating curve 0.1 1 10 100 0123456 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0.1 1 10 100 50 100 150 200 250 300 350 400 typical capacitance at 0v = 355 pf capacitance , cj [pf] reverse voltage , v r [v] 100 500 0 5 10 15 20 25 t c = 100 o c t c = 25 o c v r = 200v i f = 20a reverse recovery current , i rr [a] di/dt [a/ s] 0 200 400 600 800 1000 1200 0.001 0.01 0.1 1 10 100 1000 t c = 25 o c t c = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 100 500 40 60 80 100 120 140 t c = 100 o c t c = 25 o c v r = 200v i f = 20a reverse recovery time , t rr [ns] di/dt [a/ s] 60 80 100 120 140 160 0 5 10 15 20 25 30 dc average forward current , i f(av) [a] case temperature , t c [ o c]
?2000 fairchild semiconductor international rev. f, september 2000 ffa20u120dn package dimensions 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ? 3.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ? 0.05 0.60 +0.15 ? 0.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p dimensions in millimeters
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